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Appendix B



Appendix B: Abbreviations A-O
a-Si:H Hydrogenated amorphous silicon
AFM Atomic Force Microscope
ALD Atomic Layer Deposition
ALT Accelerated lifetime testing
CBD Chemical Bath Deposition
CIGS Cu(In,Ga)Se 2
CIGSSe Cu(In,Ga)(Se,S) 2
CIS CuInSe 2
CISSe CuIn(Se,S) 2
CTE Coefficient of Thermal Expansion
CV Capacitance Voltage
DC Direct Current
DH Damp heat
DLTS Deep Level Transient Spectroscopy
EL Electro Luminescence
EQE External Quantum Efficiency
EVA Ethylene-Vinyl Acetate
FF Fill factor
FTO Fluorine Doped Tin Oxide
GB Grain Boundary
G sh Shunt conductivity
h Hours
IEC International Electrotechnical Commission
ILGAR Ion Gas Layer Reaction
ITO Indium Tin Oxide
IV(T) Temperature dependent current-voltage measurement
IZO Indium Zinc Oxide
J sc Short circuit current density
LIT Lock-In Thermography
LPCVD Low Pressure Chemical Vapour Deposition
μ Mobility
m Metre
μm Micrometre
mm Millimetre
n Carrier concentration
nm Nanometre
OVC Ordered vacancy compound



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