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Temperature dependency of the electrical parameters of CIGS solar cells






B C
















A

D

Figure 4.2
The sample grid facing the illumination from the solar simulator with the twelve PI samples.
A. Photodiodes for monitoring of the light intensity B. Twelve cell holders to measure twelve solar cells simultaneously
C. Thermocouples on all solar cells D. Wires for connection with the measurement system.

fitting. Since the values of the shunt resistance were also used as first estimation for
the fitting procedure, the exact magnitude of the other values as obtained by fitting
can also be unreliable.


4.3 Results

The temperature dependency of the electrical parameters of 42 CIGS cells and
minimodules has been determined. The samples were divided into three global
categories, based on the substrate (SLG and PI) and deposition method (coevapouration
and ion-beam assisted coevapouration). Twelve PI samples are included in this study.
The SLG samples can be further divided based on the material used for contacting
with the measurement tools: this is indium for 7 cells and minimodules, 23 single cells
have gold contacts.


The temperature dependencies of the efficiency, as well as the J, V , fill factor, R s
oc
sc
and R , J , J and the n as a function of temperature for one solar cell per batch
sh
o
ph
are depicted in Figure 4.3. Since the calculation and fitting procedure was slightly
different for the PI and SLG samples, the absolute comparison of the resistances, J , J
ph
o
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